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savantic semiconductor product specification silicon pnp power transistors 2SB778 d escription with to-3pml package complement to type 2sd998 applications high power amplifier applications recommended for 45~50w audio frequency amplifier output stage pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions max unit v cbo collector-base voltage open emitter -120 v v ceo collector-emitter voltage open base -120 v v ebo emitter-base voltage open collector -5 v i c collector current -10 a i b base current -1.0 a p c collector power dissipation t c =25 80 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pml) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB778 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma ;i b =0 -120 v v cesat collector-emitter saturation voltage i c =-5a ;i b =-0.5a -2.5 v v be base-emitter on voltage i c =-5a;v ce =-5v -1.5 v i cbo collector cut-off current v cb =-120v; i e =0 -10 a i ebo emitter cut-off current v eb =-5v; i c =0 -10 a h fe dc current gain i c =-1a ; v ce =-5v 55 160 f t transition frequency i c =-1a ; v ce =-5v 10 mhz c ob collector output capacitance i e =0;f=1mhz;v cb =-10v 280 pf h fe classifications r o 55-110 80-160
savantic semiconductor product specification 3 silicon pnp power transistors 2SB778 package outline fig.2 outline dimensions
savantic semiconductor product specification 4 silicon pnp power transistors 2SB778

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